View HAL710SF-E_4693131.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Hardware Documentation
D at a S h e e t
HAL 710, HAL 730,
Hall-Effect Sensors with Direction Detection
(R)
(R)
Edition Oct. 13, 2009 DSH000031_002EN
HAL 710, HAL 730
Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers' technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document's content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas' products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. Micronas Trademarks - HAL
DATA SHEET
Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614, US5406202, EP0525235 and EP0548391.
Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies.
2
Oct. 13, 2009; DSH000031_002EN
Micronas
DATA SHEET
HAL 710, HAL 730
Contents Page 4 4 4 5 5 5 5 5 6 9 9 10 10 10 10 10 11 15 15 17 17 17 17 17 18 18 19 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 4. 4.1. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 5.6. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range HALL Sensor Package Codes Solderability and Welding Pin Connections Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Type Description HAL 710, HAL 730 Application Notes Ambient Temperature Extended Operating Conditions Signal Delay Test Mode Activation EMC and ESD Start-up Behavior Data Sheet History
Micronas
Oct. 13, 2009; DSH000031_002EN
3
HAL 710, HAL 730
Hall-Effect Sensors with Direction Detection Release Note: Revision bars indicate significant changes to the previous edition. 1.1. Features
DATA SHEET
- generation of Count Signals and Direction Signals - delay of the Count Signals with respect to the Direction Signal of 1 s minimum - switching type: latching - switching offset compensation at typically 150 kHz
1. Introduction The HAL 710 and the HAL 730 are monolithic integrated Hall-effect sensors manufactured in CMOS technology with two independent Hall plates S1 and S2 spaced 2.35 mm apart. The devices have two open-drain outputs: - The Count Output operates like a single latched Hall switch according to the magnetic field present at Hall plate S1 (see Fig. 4-1). - The Direction Output indicates the direction of a linear or rotating movement of magnetic objects. In combination with an active target providing a sequence of alternating magnetic north and south poles, the sensors generate the signals required to control position, speed, and direction of the target movement. The internal circuitry evaluates the direction of the movement and updates the Direction Output at every edge of the Count Signal (rising and falling). The state of the Direction Output only changes at a rising or falling edge of the Count Output. The design ensures a setup time for the Direction Output with respect to the corresponding Count Signal edge of 1/2 clock periods (1 s minimum). The devices include temperature compensation and active offset compensation. These features provide excellent stability and matching of the switching points in the presence of mechanical stress over the whole temperature and supply voltage range. This is required by systems determining the direction from the comparison of two signals. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 125 C. The HAL 710 and the HAL 730 are available in the SMD-package SOT89B-2.
- operation from 3.8 V to 24 V supply voltage - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - robustness of magnetic characteristics against mechanical stress - short-circuit protected open-drain outputs by thermal shut down - constant switching points over a wide supply voltage range - EMC corresponding to ISO 7637
1.2. Family Overview The types differ according to the behavior of the Direction Output. Type
HAL 710
Direction Output: Definition of Output States
Output high, when edge of comparator 1 precedes edge of comparator 2 Output high, when edge of comparator 2 precedes edge of comparator 1
HAL 730
4
Oct. 13, 2009; DSH000031_002EN
Micronas
DATA SHEET
HAL 710, HAL 730
1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on page 17 for details.
1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range.
Type K HAL 710 HAL 730 710K 730K
Temperature Range E 710E 730E
HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-2 Type: 710 Example: HAL710SF-K Type: 710 Package: SOT89B-2 Temperature Range: TJ = -40 C to +140 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 1.7. Pin Connections
1 VDD 3 Count Output
1.6. Solderability and Welding Solderability During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded.
4 GND
2 Direction Output
Fig. 1-1: Pin configuration
Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component.
Micronas
Oct. 13, 2009; DSH000031_002EN
5
HAL 710, HAL 730
2. Functional Description The HAL 710 and the HAL 730 are monolithic integrated circuits with two independent subblocks each consisting of a Hall plate and the corresponding comparator. Each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. If a magnetic field with flux lines perpendicular to the sensitive area is present, the biased Hall plate generates a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The output of comparator 1 (connected to S1) directly controls the Count Output. The outputs of both comparators enter the Direction Detection Block controlling the state of the Direction Output. The Direction Output is updated at every edge of comparator 1 (rising and falling). The previous state of the Direction Output is maintained between two edges of the Count Output and in case the edges at comparator 1 and comparator 2 occur in the same clock period. The subblocks are designed to have closely matched switching points. The temperature-dependent bias - common to both subblocks - increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the comparator switches to the appropriate state. The built-in hysteresis prevents oscillations of the outputs. In order to achieve good matching of the switching points of both subblocks, the magnetic offset caused by mechanical stress is compensated for by use of switching offset compensation techniques. Therefore, an internal oscillator provides a two-phase clock to both subblocks. For each subblock, the Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Shunt protection devices clamp voltage peaks at the output pins and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V.
Clock
DATA SHEET
t BS1 BS1on
BS2 BS2on
t
Count Output VOH VOL Direction Output VOH VOL t Idd t
1/fosc
tf t
Fig. 2-1: HAL 710 timing diagram with respect to the clock phase
Fig. 2-2 and Fig. 2-3 on page 7 show how the output signals are generated by the HAL 710 and the HAL 730. The magnetic flux density at the locations of the two Hall plates is shown by the two sinusodial curves at the top of each diagram. The magnetic switching points are depicted as dashed lines for each Hall plate separately. At the time t = 0, the signal S2 precedes the signal S1. The Direction Output is in the correct state according to the definition of the sensor type. When the phase of the magnetic signal changes its sign, the Direction-Output switches its state with the next signal edge of the Count Output.
6
Oct. 13, 2009; DSH000031_002EN
Micronas
DATA SHEET
HAL 710, HAL 730
HAL710 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Count Output Pin 3 S2
Direction Output Pin 2 0
Fig. 2-2: HAL 710 timing diagram
time
HAL730 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Count Output Pin 3 S2
Direction Output Pin 2 0
Fig. 2-3: HAL 730 timing diagram
time
Micronas
Oct. 13, 2009; DSH000031_002EN
7
HAL 710, HAL 730
DATA SHEET
1 VDD
Reverse Voltage and Overvoltage Protection
Temperature Dependent Bias
Hysteresis Control
Test-Mode Control
Short Circuit and Overvoltage Protection
Hall Plate 1 Comparator 3 Switch S1 Output Count Output
Hall Plate 2 Comparator Clock S2 Switch Direction Detection 2 Output Direction Output
4 GND
Fig. 2-4: HAL 710 and HAL 730 block diagram
8
Oct. 13, 2009; DSH000031_002EN
Micronas
DATA SHEET
HAL 710, HAL 730
3. Specifications 3.1. Outline Dimensions
Fig. 3-1: SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Weight approximately 0.034 g
Micronas
Oct. 13, 2009; DSH000031_002EN
9
HAL 710, HAL 730
3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-2 x1 + x2 x1 = x2 y (2.350.001) mm 1.175 mm 0.975 mm
DATA SHEET
3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol VDD VO IO TJ
1)
Parameter Supply Voltage Output Voltage Continuous Output Current Junction Temperature Range
Pin No. 1 2, 3 2, 3
Min. -15 -0.3 - -40
Max. 281) 281) 201) 170
Unit V V mA C
as long as TJmax is not exceeded
3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package.
3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND).
Symbol VDD IO VO Parameter Supply Voltage Pin No. 1 3 3 Min. 3.8 0 0 Typ. - - - Max. 24 10 24 Unit V mA V
Continuous Output Current Output Voltage (output switch off)
10
Oct. 13, 2009; DSH000031_002EN
Micronas
DATA SHEET
HAL 710, HAL 730
3.6. Characteristics at TJ = -40 C to +140 C, VDD = 3.8 V to 24V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V.
Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc ten(O) tr tf RthSB case SOT89B-2 Parameter
Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage Output Voltage over Temperature Range Output Leakage Current
Pin No.
1 1 1
Min.
3 2 - - - - - - 100 - - - -
Typ.
5.5 7 28.5
Max.
9 10 32
Unit
mA mA V
Test Conditions
TJ = 25 C
IDD = 25 mA, TJ = 25 C, t = 2 ms IOL = 20 mA, TJ = 25 C, t = 15 ms IOL = 10 mA, TJ = 25 C IOL = 10 mA, Output switched off, TJ = 25 C, VOH = 3.8 V to 24 V Output switched off, TJ 140 C, VOH = 3.8 V to 24 V
2,3
28
32
V
2,3 2,3 2,3
130 130 0.06 - 150 50
280 400 0.1
mV mV A A kHz s s s K/W
Output Leakage Current over Temperature Range Internal Sampling Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time
2,3 - 1
10 - - - - 200
VDD = 12 V, B>Bon + 2 mT or B2,3
0.2
Output FallTime Thermal Resistance Junction to Substrate Backside
2,3 -
0.2 150
1.80
1.05
1.45 2.90
1.05 0.50 1.50
Fig. 3-2: Recommended pad size SOT89B-2 Dimensions in mm
Micronas
Oct. 13, 2009; DSH000031_002EN
11
HAL 710, HAL 730
DATA SHEET
mA 25 20 IDD 15 10 5 0 -5 -10 -15 -15-10 -5 0 TA = -40 C TA = 25 C TA=140 C
HAL 7xx
mA 6
HAL 7xx
IDD 5 VDD = 24 V VDD = 12 V 4
VDD = 3.8 V 3
5 10 15 20 25 30 35 V VDD
2 -50
0
50
100 TA
150 C
Fig. 3-3: Typical supply current versus supply voltage
Fig. 3-5: Typical supply current versus ambient temperature
mA 6.0 5.5 IDD 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 2 3 4 5 6
HAL 7xx
kHz 190
HAL 7xx
TA = -40 C TA = 25 C TA = 100 C TA = 140 C 160 VDD = 3.8 V fosc 180
170
150 VDD = 4.5 V...24 V 140 -50
7
8V
0
50
100
150 TA
200 C
VDD
Fig. 3-4: Typical supply current versus supply voltage
Fig. 3-6: Typ. internal chopper frequency versus ambient temperature
12
Oct. 13, 2009; DSH000031_002EN
Micronas
DATA SHEET
HAL 710, HAL 730
kHz 240
HAL 7xx
mV 400 350
HAL 7xx
IO = 10 mA
fosc
220
VOL 300
200
250 200 TA = 25 C 150 TA = 25 C 100 50 0 0 5 10 15 20 25 VDD 30 V TA = -40 C TA = 140 C TA = 100 C
180
160
TA = -40 C TA = 140 C
140
120
0
5
10
15
20
25 VDD
30 V
Fig. 3-7: Typ. internal chopper frequency versus supply voltage
Fig. 3-9: Typical output low voltage versus supply voltage
kHz 240
HAL 7xx
mV 400
HAL 7xx
IO = 10 mA
fosc
220
VOL 300
200 TA = 140 C TA =100 C 160 TA = 25 C TA = -40 C 140 TA = 140 C 100 TA = 25 C TA = -40 C
180
200
120
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
0
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 3-8: Typ. internal chopper frequency versus supply voltage
Fig. 3-10: Typical output low voltage versus supply voltage
Micronas
Oct. 13, 2009; DSH000031_002EN
13
HAL 710, HAL 730
DATA SHEET
mV 300
HAL 7xx
IO = 10 mA VDD = 3.8 V
A 102
HAL 7xx
VOL
250 VDD = 4.5 V VDD = 24 V 200 IOH
101
100
10-1 150 10-2 100 10-3 50 VOH = 3.8 V
10-4 VOH = 24 V
0 -50
0
50
100 TA
150 C
10-5 -50
0
50
100
150 TA
200 C
Fig. 3-11: Typ. output low voltage versus ambient temperature
Fig. 3-13: Typical output leakage current versus ambient temperature
A 102 101 IOH 100 TA = 140 C 10-1 10-2 10-3 10-4 10-5 10-6 15 TA = 100 C
HAL 7xx
TA = 25 C
20
25
30 VOH
35 V
Fig. 3-12: Typical output leakage current versus output voltage
14
Oct. 13, 2009; DSH000031_002EN
Micronas
DATA SHEET
HAL 710, HAL 730
Magnetic Thresholds (quasi stationary: dB/dt<0.5 mT/ms) at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Typical characteristics for TJ = 25 C and VDD = 5 V
4. Type Description 4.1. HAL 710, HAL 730 The types differ according to the behavior of the Direction Output (see Section 1.2. on page 4).
Magnetic Features - typical BON: 14.9 mT at room temperature - typical BOFF: -14.9 mT at room temperature - temperature coefficient of -2000 ppm/K in all magnetic characteristics - operation with static magnetic fields and dynamic magnetic fields up to 10 kHz Output Voltage VO BHYS Matching BS1 and BS2 (quasi stationary: dB/dt<0.5 mT/ms) VOL BOFF 0 BON B at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Typical characteristics for TJ = 25 C and VDD = 5 V
Parameter Tj BS1on - BS2on Min. -7.5 -7.5 -7.5 -7.5 Typ. 0 0 0 0 Max. 7.5 7.5 7.5 7.5 BS1off - BS2off Min. -7.5 -7.5 -7.5 -7.5 Typ. 0 0 0 0 Max. 7.5 7.5 7.5 7.5 mT mT mT mT Unit Parameter Tj -40 C 25 C 100 C 140 C On-Point BS1on, BS2on Min. 12.5 10.7 7.7 6.0 Typ. 16.3 14.9 12.5 10.9 Max. 20 19.1 17.3 16.0 Off-Point BS1off,, BS2off Min. -20 -19.1 -17.3 -16.0 Typ. -16.3 -14.9 -12.5 -10.9 Max. -12.5 -10.7 -7.7 -6.0 mT mT mT mT Unit
Fig. 4-1: Definition of magnetic switching points for the HAL 710
Positive flux density values refer to magnetic south pole at the branded side of the package.
-40 C 25 C
Applications The HAL 710 and the HAL 730 are the optimal sensors for position-control applications with direction detection and alternating magnetic signals such as: - multipole magnet applications, - rotating speed and direction measurement, position tracking (active targets), and - window lifters.
100 C 140 C
Hysteresis Matching (quasi stationary: dB/dt<0.5 mT/ms) at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Typical characteristics for TJ = 25 C and VDD = 5 V
Parameter Tj -40 C 25 C 100 C 140 C (BS1on - BS1off) / (BS2on - BS2off) Min. 0.85 0.85 0.85 0.85 Typ. 1.0 1.0 1.0 1.0 Max. 1.2 1.2 1.2 1.2 - Unit
Micronas
Oct. 13, 2009; DSH000031_002EN
15
HAL 710, HAL 730
DATA SHEET
mT 20 BON 15 BOFF 10
HAL 710, HAL730
mT 25 20 BON BOFF 15 10
HAL 710, HAL730
BON
BONmax BONtyp BONmin VDD = 3.8 V VDD = 4.5 V... 24 V
5 0 -5 -10 -15 -20
TA = -40 C TA = 25 C TA = 100 C TA = 140 C
5 0 -5 -10
BOFFmax BOFFtyp
-15 BOFF -20 0 5 10 15 20 25 VDD 30 V -25 -50 0 50 100 TA, TJ
BOFFmin
150 C
Fig. 4-2: Magnetic switching points versus supply voltage
Fig. 4-4: Magnetic switching points versus ambient temperature
mT 20 15
HAL 710, HAL 730
BON BOFF
BON 10 5 0 -5 -10 -15 -20 BOFF
TA = -40 C TA = 25 C TA = 100 C TA = 140 C
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 4-3: Magnetic switching points versus supply voltage
16
Oct. 13, 2009; DSH000031_002EN
Micronas
DATA SHEET
HAL 710, HAL 730
5.3. Signal Delay The extra circuitry required for the direction detection increases the latency of the Count and Direction Signal compared to a simple switch (e.g., HAL 525). This extra delay corresponds to 0.5 and 1 clock period for the Direction Signal and Count Signal respectively.
5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA).
T J = T A + T
5.4. Test Mode Activation In order to obtain the normal operation as described above, two external pull-up resistors with appropriate values are required to connect each output to an external supply, such that the potential at the open-drain output rises to at least 3 V in less than 10 s after having turned off the corresponding pull-down transistor or after having applied VDD. If the Direction Output is pulled low externally (the potential does not rise after the internal pull-down transistor has been turned off), the device enters Manufacturer Test Mode. Direction detection is not functional in Manufacturer Test Mode. The device returns to normal operation as soon as the Count Output goes high.
At static conditions and continuous operation, the following equation applies:
T = I DD x V DD x R th
For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as:
Note: The presence of a Manufacturer Test Mode requires appropriate measures to prevent accidental activation (e.g., in response to EMC events).
T Amax = T Jmax - T
5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see Section 3.5. on page 10).
Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification.
Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas.
Micronas
Oct. 13, 2009; DSH000031_002EN
17
HAL 710, HAL 730
5.5. EMC and ESD For applications that cause disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-1). The series resistor and the capacitor should be placed as closely as possible to the Hall sensor. Please contact Micronas for detailed investigation reports with EMC and ESD results.
DATA SHEET
RV 220 1 VDD VEMC VP 4.7 nF 3 S1-Output 2 S2-Output 20 pF 20 pF RL 2.4 k RL 2.4 k
4 GND
Fig. 5-1: Test circuit for EMC investigations
5.6. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the "Characteristics" (see Section 3.6. on page 11). During the initialization time, the output states are not defined and the outputs can toggle. After ten(O), both outputs will be either high or low for a stable magnetic field (no toggling) and the Count Output will be low if the applied magnetic field B exceeds BON. The Count Output will be high if B drops below BOFF. The Direction Output will have the correct state after the second edge (rising or falling) in the same direction. The device contains a Power-On Reset circuit (POR) generating a reset when VDD rises. This signal is used to disable Test Mode. The generation of this reset signal is guaranteed when VDD at the chip rises to a minimum 3.8 V in less than 4 s monotonically. If this condition is violated, the internal reset signal might be missing. Under these circumstances, the chip will still operate according to the specification, but the risk of toggling outputs during ten(O) increases; and for magnetic fields between BOFF and BON, the output states of the Hall sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field then must exceed BONmax, respectively, drop below BOFFmin.
18
Oct. 13, 2009; DSH000031_002EN
Micronas
HAL 710, HAL 730
6. Data Sheet History 1. Data Sheet: "HAL710, HAL730 Hall-Effect Sensors with Direction Detection", May 13, 2002, 6251-4781DS. First release of the data sheet. 2. Data Sheet: "HAL710, HAL730 Hall-Effect Sensors with Direction Detection", Sept. 15, 2004, 6251-4782DS. Second release of the data sheet. Major changes: - new package diagram for SOT89B-2 3. Data Sheet: "HAL710, HAL730 Hall-Effect Sensors with Direction Detection", July 31, 2006, 6251-4783DS. Third release of the data sheet. Major changes: - section 5.5 EMC and ESD added 4. Data Sheet: "HAL 710, HAL 730 Hall-Effect Sensors with Direction Detection", Oct.13, 2009, DSH000031_002EN. Fourth release of the data sheet. Major changes: - Patents mentioned on disclaimer page updated - Section 1.6. on page 5 "Solderability and Welding" updated - Package diagram updated
DATA SHEET
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com
19
Oct. 13, 2009; DSH000031_002EN
Micronas

▲Up To Search▲

Price & Availability of HAL710SF-E

	To Download HAL710SF-E Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .